N-channel MOSFET, 60 V drain-source voltage, featuring low on-resistance of 15.7 mΩ at a 10V gate-source voltage. This standard level MOSFET is housed in a 4-pin SOIC package, designed for efficient power switching applications.
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Technical Specifications
NXP PSMN017-60YS,115 technical specifications.
General
Pin Count
4
Compliance
RoHS
Yes
REACH
not_compliant
Military Spec
False
Datasheet
NXP PSMN017-60YS,115 Datasheet
Download the complete datasheet for NXP PSMN017-60YS,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.