N-channel MOSFET featuring a low on-resistance of 2.8 mΩ, designed for standard level gate drive. This 4-pin SOIC package offers a drain-source voltage rating of 40 V. The component utilizes LFPAK technology for enhanced thermal performance.
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Technical Specifications
NXP PSMN2R6-40YS,115 technical specifications.
General
| Pin Count | 4 |
Compliance
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
NXP PSMN2R6-40YS,115 Datasheet
Download the complete datasheet for NXP PSMN2R6-40YS,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.