NXP
PSMN3R7-25YLC,115
PSMN3R7-25YLC - N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology SOIC 4-Pin
MountingSurface Mount
PolarityN-CHANNEL
Power64W
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Technical Specifications
NXP PSMN3R7-25YLC,115 technical specifications.
General
Continuous Drain Current (ID)
97A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
3.9mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
5.1MR
Fall Time
10.7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.585nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
64W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
64W
Radiation Hardening
No
Rds On Max
3.9mR
RoHS Compliant
Yes
Turn-Off Delay Time
26ns
Turn-On Delay Time
16.6ns
Compliance
RoHS
Compliant
Datasheet
NXP PSMN3R7-25YLC,115 Datasheet
Download the complete datasheet for NXP PSMN3R7-25YLC,115 to view detailed technical specifications.
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