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Technical Specifications
NXP PSMN3R9-60PSQ technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 130A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.94mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.6nF |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 263W |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 3.9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 62.7ns |
| Turn-On Delay Time | 25.3ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PSMN3R9-60PSQ Datasheet
Download the complete datasheet for NXP PSMN3R9-60PSQ to view detailed technical specifications.
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