The 15C01M-TL-E is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 15V and a maximum collector current of 700mA. It has a gain bandwidth product of 330MHz and a maximum power dissipation of 300mW. The transistor is packaged in a SC package and is lead-free and RoHS compliant. It operates over a temperature range of -55°C to 150°C.
Frequency330MHz
PackageSC
PolarityNPN
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Technical Specifications
Onsemi 15C01M-TL-E technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 330MHz |
| Height | 0.9mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 700mA |
| Max Frequency | 330MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 330MHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 15C01M-TL-E Datasheet
Download the complete datasheet for Onsemi 15C01M-TL-E to view detailed technical specifications.
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