
General purpose rectifier diode featuring 200mA average rectified current and 4A peak non-repetitive surge current. This through-hole component offers a fast 4ns reverse recovery time and a maximum repetitive reverse voltage of 100V. With a 500mW power dissipation and a compact DO-35 package, it operates across a wide temperature range from -65°C to 175°C.
Onsemi 1N4448 technical specifications.
| Average Rectified Current | 200mA |
| Capacitance | 2pF |
| Package/Case | DO-35 |
| Contact Plating | Tin, Matte |
| Current Rating | 200mA |
| Forward Current | 300mA |
| Height | 1.91mm |
| Lead Free | Lead Free |
| Length | 4.56mm |
| Max Forward Surge Current (Ifsm) | 4A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Max Reverse Current | 5uA |
| Max Reverse Voltage (DC) | 100V |
| Max Surge Current | 4A |
| Mount | Through Hole |
| Output Current | 200mA |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 4A |
| Polarity | Standard |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 4ns |
| Reverse Recovery Time-Max | 4ns |
| RoHS Compliant | Yes |
| Voltage | 75V |
| DC Rated Voltage | 100V |
| Weight | 0.004445oz |
| Width | 1.91mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 1N4448 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
