General purpose rectifier diode featuring 200mA average rectified current and 4A peak non-repetitive surge current. This through-hole component offers a fast 4ns reverse recovery time and a maximum repetitive reverse voltage of 100V. With a 500mW power dissipation and a compact DO-35 package, it operates across a wide temperature range from -65°C to 175°C.
PackageDO-35
Voltage75V
Capacitance2pF
Current Rating200mA
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Technical Specifications
Onsemi 1N4448 technical specifications.
General
Average Rectified Current
200mA
Capacitance
2pF
Package/Case
DO-35
Contact Plating
Tin, Matte
Current Rating
200mA
Forward Current
300mA
Height
1.91mm
Lead Free
Lead Free
Length
4.56mm
Max Forward Surge Current (Ifsm)
4A
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Max Repetitive Reverse Voltage (Vrrm)
100V
Max Reverse Current
5uA
Max Reverse Voltage (DC)
100V
Max Surge Current
4A
Mount
Through Hole
Output Current
200mA
Package Quantity
2000
Packaging
Bulk
Peak Non-Repetitive Surge Current
4A
Polarity
Standard
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
4ns
Reverse Recovery Time-Max
4ns
RoHS Compliant
Yes
Voltage
75V
DC Rated Voltage
100V
Weight
0.004445oz
Width
1.91mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 1N4448 Datasheet
Download the complete datasheet for Onsemi 1N4448 to view detailed technical specifications.
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