General purpose rectifier diode featuring 3A average rectified current and 800V repetitive reverse voltage. This silicon component offers a maximum forward surge current of 200A and operates across a temperature range of -65°C to 150°C. The axial package has a diameter of 5.3mm and is constructed with matte tin contact plating. It is RoHS compliant and halogen-free.
PackageAxial
Current Rating3A
PolarityStandard
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Technical Specifications
Onsemi 1N5407G technical specifications.
General
| Average Rectified Current | 3A |
| Package/Case | Axial |
| Contact Plating | Tin, Matte |
| Current Rating | 3A |
| Diameter | 5.3mm |
| Forward Current | 3A |
| Halogen Free | Halogen Free |
| Height | 9.5mm |
| Lead Free | Lead Free |
| Length | 9.5mm |
| Max Forward Surge Current (Ifsm) | 200A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Max Reverse Current | 10uA |
| Max Reverse Voltage (DC) | 800V |
| Max Surge Current | 200A |
| Output Current | 3A |
| Package Quantity | 500 |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 200A |
| Polarity | Standard |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Voltage | 800V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 1N5407G Datasheet
Download the complete datasheet for Onsemi 1N5407G to view detailed technical specifications.
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