NPN Bipolar Junction Transistor (BJT) for power applications, featuring a 60V collector-emitter voltage and a 15A maximum DC collector current. This single-element silicon transistor offers a maximum power dissipation of 115,000mW and a minimum DC current gain of 20 at 4A/4V. Housed in a 3-pin TO-3 metal package (TO-204-AA) with through-hole mounting, it operates across a temperature range of -65°C to 200°C.
PackageTO-3
MountingThrough Hole
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Technical Specifications
Onsemi 2N3055 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-204-AA |
| Package/Case | TO-3 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 39.37 |
| Package Width (mm) | 26.67(Max) |
| Package Height (mm) | 8.51(Max) |
| Seated Plane Height (mm) | 8.51(Max) |
| Pin Pitch (mm) | 10.92 |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-204-AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 15A |
| Maximum Power Dissipation | 115000mW |
| Material | Si |
| Minimum DC Current Gain | 20@4A@4V|5@10A@4V |
| Maximum Transition Frequency | 2.5(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi 2N3055 Datasheet
Download the complete datasheet for Onsemi 2N3055 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.