The 2N3416 is a TO-92 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It has a maximum power dissipation of 625mW and operates over a temperature range of -55°C to 150°C. The transistor is lead-free and RoHS compliant, packaged in bulk quantities of 2000 units.
PackageTO-92
Voltage50V
Current Rating500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi 2N3416 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | 2N3416 |
| Voltage | 50V |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N3416 Datasheet
Download the complete datasheet for Onsemi 2N3416 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
