The 2N3416_D29Z is a TO-226-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The transistor is lead-free and has a maximum power dissipation of 625mW.
PackageTO-226-3
Current Rating500mA
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi 2N3416_D29Z technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Series | 2N3416 |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N3416_D29Z Datasheet
Download the complete datasheet for Onsemi 2N3416_D29Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
