
NPN RF small signal bipolar junction transistor in a TO-92 package. Features a 12V collector-emitter breakdown voltage and a 50mA continuous collector current. Operates up to 2.1GHz with a minimum hFE of 20. Designed for through-hole mounting, this lead-free and RoHS compliant component offers a power dissipation of 350mW and an operating temperature range of -55°C to 150°C.
Onsemi 2N3663 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 2.1GHz |
| Gain | 1.5dB |
| Gain Bandwidth Product | 2.1GHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 2.1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 2.1GHz |
| DC Rated Voltage | 12V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N3663 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
