NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 40V collector-emitter breakdown voltage and a 200mA maximum collector current. Offers a 300MHz gain bandwidth product and a maximum power dissipation of 625mW. Operates within a temperature range of -55°C to 150°C. This through-hole component is RoHS compliant and supplied in an ammo pack.
Frequency300MHz
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N3904ZL1G technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
300mV
Current Rating
200mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
5.33mm
hFE Min
40
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
40V
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N3904ZL1G Datasheet
Download the complete datasheet for Onsemi 2N3904ZL1G to view detailed technical specifications.
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