NPN bipolar junction transistor in a TO-92 package, featuring a 30V collector-emitter breakdown voltage and a maximum collector current of 200mA. This through-hole component offers a transition frequency of 250MHz and a minimum hFE of 50. Designed for operation across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 625mW and is lead-free and RoHS compliant.
Frequency250MHz
PackageTO-92
Current Rating50mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N4123BU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N4123BU Datasheet
Download the complete datasheet for Onsemi 2N4123BU to view detailed technical specifications.
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