NPN bipolar junction transistor (BJT) in a TO-92-3 package for through-hole mounting. Features a 30V collector-emitter breakdown voltage and a 200mA maximum collector current. Offers a 250MHz transition frequency and a minimum hFE of 50. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied on tape and reel.
Frequency250MHz
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N4123TFR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N4123TFR Datasheet
Download the complete datasheet for Onsemi 2N4123TFR to view detailed technical specifications.
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