NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-226-3 package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW.
Frequency250MHz
PackageTO-226-3
Current Rating600mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N4401_D11Z technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N4401_D11Z Datasheet
Download the complete datasheet for Onsemi 2N4401_D11Z to view detailed technical specifications.
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