NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector-emitter voltage (VCEO) of 40V and a maximum collector current of 600mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in an ammo pack for through-hole mounting.
Frequency250MHz
PackageTO-92
Current Rating600mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N4401TA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
5.33mm
hFE Min
100
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
40V
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N4401TA Datasheet
Download the complete datasheet for Onsemi 2N4401TA to view detailed technical specifications.
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