
PNP Bipolar Junction Transistor (BJT) with a 40V Collector-Emitter Voltage (VCEO) and 40V Collector Base Voltage (VCBO). Features a maximum collector current of 600mA and a transition frequency of 200MHz. This through-hole component is housed in a TO-92 package, offering a minimum hFE of 30 and a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
Onsemi 2N4403G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Type | General Purpose |
| DC Rated Voltage | -40V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N4403G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
