PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V collector-emitter voltage (VCEO) and a maximum collector current of 600mA. Operates with a 200MHz transition frequency and a minimum hFE of 30. Packaged in a TO-92 (TO-226AA) through-hole mount with 3 pins, supplied on tape and reel. Maximum power dissipation is 625mW, with an operating temperature range of -55°C to 150°C.
Frequency200MHz
PackageTO-92-3
Current Rating-600mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N4403RLRM technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N4403RLRM Datasheet
Download the complete datasheet for Onsemi 2N4403RLRM to view detailed technical specifications.
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