
PNP Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a maximum collector current of 600mA and a collector-emitter voltage of 40V. This through-hole component offers a transition frequency of 200MHz and a minimum DC current gain (hFE) of 100. With a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C, it is RoHS compliant and supplied in an ammo pack of 2000 units.
Onsemi 2N4403TA technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 5.33mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -40V |
| Weight | 0.24g |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N4403TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
