PNP Bipolar Junction Transistor (BJT) in a TO-92-3 package, featuring a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of -600mA. This through-hole component offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 200MHz. With a maximum power dissipation of 625mW, it operates across a temperature range of -55°C to 150°C and is RoHS compliant. Packaged in an ammo pack, it is suitable for high-volume applications.
Frequency200MHz
PackageTO-92-3
Current Rating-600mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi 2N4403TAR technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Current Rating
-600mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
5.33mm
hFE Min
100
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-40V
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N4403TAR Datasheet
Download the complete datasheet for Onsemi 2N4403TAR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
