Medium Power NPN Bipolar Junction Transistor (BJT) in a TO-225 package. Features a maximum collector current of 1A and a collector-emitter voltage (VCEO) of 40V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. Designed for operation between -65°C and 150°C with a maximum power dissipation of 30W. This component is RoHS and Halogen Free compliant.
Onsemi 2N4921G technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Halogen Free | Halogen Free |
| Height | 0.437inch |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 0.307inch |
| Max Collector Current | 1A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 40V |
| Width | 0.118inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N4921G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.