PNP bipolar junction transistor in a TO-92 package, featuring a maximum collector current of 100mA and a collector-emitter voltage of 50V. This through-hole mounted component offers a minimum DC current gain (hFE) of 150 and a transition frequency of 40MHz. It operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. RoHS compliant and lead-free.
Frequency40MHz
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5086TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -3V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5086TA Datasheet
Download the complete datasheet for Onsemi 2N5086TA to view detailed technical specifications.
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