
Low noise PNP bipolar junction transistor featuring a 50V collector-emitter voltage (VCEO) and a maximum collector current of 50mA. This TO-92 packaged component offers a minimum DC current gain (hFE) of 250 and a transition frequency of 40MHz. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 625mW. The transistor is RoHS compliant and supplied in bulk packaging.
Onsemi 2N5087G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| Height | 0.21inch |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Length | 0.204inch |
| Max Collector Current | 50mA |
| Max Frequency | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -50V |
| Width | 0.165inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N5087G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
