Low noise PNP bipolar junction transistor featuring a 50V collector-emitter voltage (VCEO) and a maximum collector current of 50mA. This TO-92 packaged component offers a minimum DC current gain (hFE) of 250 and a transition frequency of 40MHz. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 625mW. The transistor is RoHS compliant and supplied in bulk packaging.
Frequency40MHz
PackageTO-92-3
Current Rating-50mA
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi 2N5087G technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Current Rating
-50mA
Emitter Base Voltage (VEBO)
3V
Frequency
40MHz
Gain Bandwidth Product
40MHz
Height
0.21inch
hFE Min
250
Lead Free
Lead Free
Length
0.204inch
Max Collector Current
50mA
Max Frequency
40MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Number of Elements
1
Package Quantity
5000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
40MHz
DC Rated Voltage
-50V
Width
0.165inch
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N5087G Datasheet
Download the complete datasheet for Onsemi 2N5087G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
