PNP bipolar junction transistor (BJT) in a TO-92 package. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 150 and a transition frequency of 40MHz. Designed for through-hole mounting with a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency40MHz
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5087TF technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
3V
Frequency
40MHz
Gain Bandwidth Product
40MHz
hFE Min
150
Lead Free
Lead Free
Max Collector Current
100mA
Max Frequency
40MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
40MHz
DC Rated Voltage
-50V
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N5087TF Datasheet
Download the complete datasheet for Onsemi 2N5087TF to view detailed technical specifications.
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