The 2N5089TAR is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 25V and a maximum collector current of 100mA. It has a gain bandwidth product of 50MHz and a maximum power dissipation of 625mW. The transistor is RoHS compliant and has a maximum operating temperature of 150°C. It is available in a lead-free package and is suitable for use in a variety of applications. The transistor has a minimum operating temperature of -55°C and a maximum collector-emitter voltage of 500mV.
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi 2N5089TAR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 400 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5089TAR Datasheet
Download the complete datasheet for Onsemi 2N5089TAR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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