NPN bipolar junction power transistor in a TO-225 package. Features a maximum collector current of 4A and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 2MHz. Designed for operation between -65°C and 150°C with a maximum power dissipation of 40W. This component is RoHS and Halogen Free compliant.
Frequency2MHz
PackageTO-225-3
Current Rating4A
PolarityNPN
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Technical Specifications
Onsemi 2N5190G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.4V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| Halogen Free | Halogen Free |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Frequency | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5190G Datasheet
Download the complete datasheet for Onsemi 2N5190G to view detailed technical specifications.
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