NPN bipolar junction transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 50V. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 30MHz. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. This component is lead-free and RoHS compliant.
Frequency30MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5210_D81Z technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
700mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
4.5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
hFE Min
200
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
625mW
RoHS Compliant
Yes
Series
2N5210
Transition Frequency
30MHz
DC Rated Voltage
50V
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N5210_D81Z Datasheet
Download the complete datasheet for Onsemi 2N5210_D81Z to view detailed technical specifications.
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