NPN Bipolar Junction Transistor (BJT) in a TO-92 package, designed for amplification. Features a 50V collector-emitter breakdown voltage and a 50V collector-base voltage. Offers a maximum collector current of 100mA and a minimum hFE of 200. Operates with a transition frequency of 30MHz and a maximum power dissipation of 625mW. This through-hole component is RoHS compliant and suitable for operation between -55°C and 150°C.
Frequency30MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5210BU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| Height | 5.33mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 100mA |
| Max Frequency | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 50V |
| Weight | 0.179g |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5210BU Datasheet
Download the complete datasheet for Onsemi 2N5210BU to view detailed technical specifications.
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