ONSEMI

2N5210TF

Datasheet

NPN BJT Transistor 50V 100mA 30MHz TO-92

Onsemi

2N5210TF

Name: 2N5210TF Onsemi
Brand: Onsemi
SKU: 2N5210TF

NPN BJT Transistor 50V 100mA 30MHz TO-92

NPN bipolar junction transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. Offers a minimum DC current gain (hFE) of 200 and a transition frequency (fT) of 30MHz. Maximum power dissipation is 625mW, with operating temperatures ranging from -55°C to 150°C. This component is lead-free and RoHS compliant.

Frequency30MHz

PackageTO-92-3

Current Rating100mA

MountingThrough Hole

Quick Jump:

Technical Specifications

Onsemi 2N5210TF technical specifications.

General

Package/Case	TO-92-3
Collector Base Voltage (VCBO)	50V
Collector Emitter Breakdown Voltage	50V
Collector Emitter Saturation Voltage	700mV
Collector Emitter Voltage (VCEO)	50V
Collector-emitter Voltage-Max	700mV
Current Rating	100mA
Emitter Base Voltage (VEBO)	4.5V
Frequency	30MHz
Gain Bandwidth Product	30MHz
hFE Min	200
Lead Free	Lead Free
Max Collector Current	100mA
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	625mW
Mount	Through Hole
Number of Elements	1
Package Quantity	2000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	625mW
RoHS Compliant	Yes
Transition Frequency	30MHz
DC Rated Voltage	50V
Weight	0.24g