PNP Bipolar Junction Transistor (BJT) in a TO-92-3 package. Features a 120V collector-emitter breakdown voltage and a 600mA maximum collector current. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 400MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Designed for through-hole mounting.
PackageTO-92-3
Current Rating600mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi 2N5400 technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 400MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 400MHz |
| DC Rated Voltage | -120V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N5400 Datasheet
Download the complete datasheet for Onsemi 2N5400 to view detailed technical specifications.
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