PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 120V collector-emitter breakdown voltage and a 600mA maximum collector current. Operates with a 400MHz transition frequency and offers a minimum hFE of 30. Packaged in a TO-92-3 through-hole mount configuration, this lead-free component is RoHS compliant and rated for operation between -55°C and 150°C.
Frequency400MHz
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5400G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 400MHz |
| Gain Bandwidth Product | 400MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 400MHz |
| DC Rated Voltage | -120V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5400G Datasheet
Download the complete datasheet for Onsemi 2N5400G to view detailed technical specifications.
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