PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-226-3 package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 150V. Operates with a transition frequency of 400MHz and a minimum hFE of 60. Rated for a DC collector base voltage of -160V and a maximum power dissipation of 625mW.
Frequency400MHz
PackageTO-226-3
Current Rating-600mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5401_D28Z technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 400MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 400MHz |
| DC Rated Voltage | -160V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N5401_D28Z Datasheet
Download the complete datasheet for Onsemi 2N5401_D28Z to view detailed technical specifications.
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