The 2N5401RLRA is a PNP bipolar junction transistor with a maximum collector-emitter breakdown voltage of 150V and a maximum collector current of 600mA. It has a gain bandwidth product of 300MHz and a maximum operating temperature of 150°C. The transistor is packaged in a TO-92-3 case and is available in tape and reel packaging. It is not RoHS compliant due to the presence of lead.
Frequency300MHz
PackageTO-92-3
Current Rating-600mA
PolarityPNP
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Technical Specifications
Onsemi 2N5401RLRA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 50 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
| DC Rated Voltage | -150V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi 2N5401RLRA Datasheet
Download the complete datasheet for Onsemi 2N5401RLRA to view detailed technical specifications.
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