PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a 150V collector-emitter breakdown voltage and a maximum collector current of 600mA. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 400MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 625mW. Through-hole mounting, lead-free, and RoHS compliant.
Frequency400MHz
PackageTO-92-3
Current Rating-600mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi 2N5401TAR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 400MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 400MHz |
| DC Rated Voltage | -160V |
| Weight | 0.1782g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5401TAR Datasheet
Download the complete datasheet for Onsemi 2N5401TAR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
