PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a 150V collector-emitter breakdown voltage and a maximum collector current of 600mA. Operates with a 400MHz transition frequency and a minimum hFE of 60. Designed for through-hole mounting, this lead-free and RoHS compliant component offers a power dissipation of 625mW and an operating temperature range of -55°C to 150°C.
Frequency400MHz
PackageTO-92-3
Current Rating-600mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5401TFR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 400MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 400MHz |
| DC Rated Voltage | -160V |
| Weight | 0.1782g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5401TFR Datasheet
Download the complete datasheet for Onsemi 2N5401TFR to view detailed technical specifications.
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