NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 160V collector-emitter breakdown voltage and 600mA maximum collector current. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 300MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Packaged on a 2000-piece tape and reel, this component is lead-free and RoHS compliant.
Frequency300MHz
PackageTO-92-3
Current Rating600mA
PolarityNPN
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Technical Specifications
Onsemi 2N5551RL1G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 200mV |
| Contact Plating | Copper, Tin, Silver |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 160V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5551RL1G Datasheet
Download the complete datasheet for Onsemi 2N5551RL1G to view detailed technical specifications.
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