NPN bipolar junction transistor for general-purpose small signal applications. Features a 160V collector-emitter breakdown voltage and 600mA maximum collector current. Operates with a 300MHz transition frequency and a minimum hFE of 80. Housed in a TO-92-3 package for through-hole mounting, with a maximum power dissipation of 625mW.
Frequency300MHz
PackageTO-92-3
Current Rating600mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5551RLRP technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 80 |
| Lead Free | Contains Lead |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 160V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N5551RLRP Datasheet
Download the complete datasheet for Onsemi 2N5551RLRP to view detailed technical specifications.
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