Small signal NPN bipolar junction transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 160V and a maximum collector current of 600mA. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. Supplied on a 2000-piece tape and reel with tin, matte contact plating.
Frequency300MHz
PackageTO-92-3
Current Rating600mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N5551TFR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Contact Plating | Tin, Matte |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 160V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5551TFR Datasheet
Download the complete datasheet for Onsemi 2N5551TFR to view detailed technical specifications.
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