The 2N5656 is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 300V and a maximum DC collector current of 0.5A. It is packaged in a TO-225 plastic package with a maximum length of 7.8mm, width of 3mm, and height of 11.1mm. The transistor is mounted through a hole and has a pin pitch of 2.54mm. The material is silicon and the minimum DC current gain is 250. The transistor is suitable for general-purpose applications.
PackageTO-225
MountingThrough Hole
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Technical Specifications
Onsemi 2N5656 technical specifications.
General
| Package/Case | TO-225 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 7.8(Max) |
| Package Width (mm) | 3(Max) |
| Package Height (mm) | 11.1(Max) |
| Pin Pitch (mm) | 2.54(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 300V |
| Maximum DC Collector Current | 0.5A |
| Material | Si |
| Minimum DC Current Gain | 250(Max) |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | No |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi 2N5656 Datasheet
Download the complete datasheet for Onsemi 2N5656 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.