The 2N5961 is a TO-226-3 packaged NPN transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 100mA. It has a maximum power dissipation of 625mW and is suitable for through hole mounting. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-226-3
Current Rating100mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi 2N5961 technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 150 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5961 Datasheet
Download the complete datasheet for Onsemi 2N5961 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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