The 2N6109 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 7A. It features a TO-220-3 package and is rated for operation over a temperature range of -65°C to 150°C. The transistor has a gain bandwidth product of 10MHz and a maximum power dissipation of 40W.
PackageTO-220-3
Current Rating7A
PolarityPNP
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Technical Specifications
Onsemi 2N6109 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector-emitter Voltage-Max | 3.5V |
| Current Rating | 7A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 10MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N6109 Datasheet
Download the complete datasheet for Onsemi 2N6109 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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