The 2N6341G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 150V and a maximum collector current of 25A. It is packaged in a TO-204-3 case and is lead free. The transistor operates over a temperature range of -65°C to 200°C and has a maximum power dissipation of 200W. It is compliant with RoHS regulations.
PackageTO-204-3
Current Rating25A
PolarityNPN
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Technical Specifications
Onsemi 2N6341G technical specifications.
General
| Package/Case | TO-204-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | 25A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 25A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | 150V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6341G Datasheet
Download the complete datasheet for Onsemi 2N6341G to view detailed technical specifications.
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