NPN bipolar junction transistor (BJT) in a TO-92 package. Features a 40V collector-emitter breakdown voltage (VCEO) and a 40V collector-base breakdown voltage (VCBO). Offers a continuous collector current of 500mA and a current rating of 1.2A. Exhibits a minimum DC current gain (hFE) of 30000 and a maximum power dissipation of 625mW. Designed for through-hole mounting with a wide operating temperature range from -55°C to 150°C.
PackageTO-92
Current Rating1.2A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi 2N6426 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 500mA |
| Current Rating | 1.2A |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 30000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| DC Rated Voltage | 40V |
| Weight | 0.201g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N6426 Datasheet
Download the complete datasheet for Onsemi 2N6426 to view detailed technical specifications.
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