
NPN bipolar junction transistor in a TO-92 package, featuring a 50V collector-emitter breakdown voltage and a 200mA maximum collector current. This through-hole component offers a transition frequency of 700MHz and a minimum DC current gain (hFE) of 250. Designed for operation between -55°C and 150°C, it has a maximum power dissipation of 625mW. The transistor is lead-free and RoHS compliant.
Onsemi 2N6428ATA technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 700MHz |
| Gain Bandwidth Product | 700MHz |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | 2N6428A |
| Transition Frequency | 700MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N6428ATA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
