NPN Power Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features 80V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 15A. Offers a minimum DC current gain (hFE) of 20 and a transition frequency (fT) of 5MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 1.8W. This RoHS compliant component is supplied in a 50-piece tube.
Frequency5MHz
PackageTO-220-3
Current Rating15A
PolarityPNP
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Technical Specifications
Onsemi 2N6491G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 90V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 3.5V |
| Contact Plating | Tin, Matte |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 5MHz |
| Gain Bandwidth Product | 5MHz |
| Height | 0.62inch |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 15A |
| Max Frequency | 5MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.8W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 5MHz |
| DC Rated Voltage | -80V |
| Width | 0.19inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6491G Datasheet
Download the complete datasheet for Onsemi 2N6491G to view detailed technical specifications.
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