NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a 350V collector-emitter breakdown voltage and 350V collector-base voltage. Offers a maximum collector current of 500mA and a transition frequency of 200MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Compliant with RoHS standards.
Frequency200MHz
PackageTO-92
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N6517BU technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
350V
Collector Emitter Breakdown Voltage
350V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
350V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin, Matte
Current Rating
500mA
Emitter Base Voltage (VEBO)
6V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
4.58mm
hFE Min
30
Lead Free
Lead Free
Length
4.58mm
Max Collector Current
500mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
NPN
Power Dissipation
625mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
2N6517
Transition Frequency
200MHz
DC Rated Voltage
350V
Weight
0.179g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N6517BU Datasheet
Download the complete datasheet for Onsemi 2N6517BU to view detailed technical specifications.
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