NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a 350V collector-emitter breakdown voltage and 350V collector-base voltage. Offers a maximum collector current of 500mA and a transition frequency of 200MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Compliant with RoHS standards.
Frequency200MHz
PackageTO-92
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N6517BU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Matte |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 4.58mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Collector Current | 500mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | 2N6517 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
| Weight | 0.179g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6517BU Datasheet
Download the complete datasheet for Onsemi 2N6517BU to view detailed technical specifications.
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