NPN Bipolar Junction Transistor (BJT) designed for high voltage applications. Features a maximum collector current of 500mA and a maximum collector-emitter breakdown voltage of 350V, with a peak breakdown voltage of 400V. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 200MHz. Packaged in a TO-92-3 through-hole configuration with tin, matte contact plating, suitable for tape and reel packaging. Operates across a wide temperature range from -55°C to 150°C.
Frequency200MHz
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N6517CTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Matte |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 200MHz |
| Height | 4.58mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 500mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
| Weight | 0.24g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6517CTA Datasheet
Download the complete datasheet for Onsemi 2N6517CTA to view detailed technical specifications.
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