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Technical Specifications
Onsemi 2N6517G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6517G Datasheet
Download the complete datasheet for Onsemi 2N6517G to view detailed technical specifications.
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