NPN Bipolar Junction Transistor (BJT) in a TO-92-3 package, designed for high voltage applications. Features a Collector Emitter Breakdown Voltage of 350V and a maximum Collector Emitter Voltage (VCEO) of 350V. Offers a continuous current rating of 500mA with a transition frequency of 200MHz. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. Supplied on a 2000-piece tape and reel.
Frequency200MHz
PackageTO-92-3
Current Rating500mA
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi 2N6517RLRA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 20 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N6517RLRA Datasheet
Download the complete datasheet for Onsemi 2N6517RLRA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.