NPN Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 350V Collector-Emitter Breakdown Voltage and 350V Collector-Base Voltage. This transistor offers a maximum collector current of 500mA and a transition frequency of 200MHz. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 625mW. Packaged on a 2000-piece tape and reel, this component is lead-free and RoHS compliant.
Frequency200MHz
PackageTO-92-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi 2N6517RLRAG technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6517RLRAG Datasheet
Download the complete datasheet for Onsemi 2N6517RLRAG to view detailed technical specifications.
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